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d a t a sh eet product speci?cation 2003 jun 05 integrated circuits TZA3047A; tza3047b 30 mbits/s up to 1.25 gbits/s laser drivers
2003 jun 05 2 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b contents features 1.1 general 1.2 control features 1.3 protection features 2 applications 3 general description 4 ordering information 5 block diagram 6 pinning 7 functional description 7.1 data and clock input 7.2 retiming 7.3 pulse width adjustment 7.4 modulator output stage 7.5 dual-loop control 7.6 average loop control 7.7 direct current setting 7.8 soft start 7.9 alarm functions 7.10 enable 7.11 reference block 8 limiting values 9 thermal characteristics 10 dc characteristics 11 ac characteristics 12 application information 12.1 design equations 12.1.1 bias and modulation currents 12.1.2 average monitor current and extinction ratio 12.1.3 dual-loop control 12.1.4 alarm operating current 12.1.5 alarm monitor current 12.1.6 pulse width adjustment 12.2 TZA3047A with dual-loop control 12.3 tza3047b with dual-loop control 12.4 tza3047b with average loop control 13 bonding pad locations 14 package outline 15 soldering 15.1 introduction to soldering surface mount packages 15.2 reflow soldering 15.3 wave soldering 15.4 manual soldering 15.5 suitability of surface mount ic packages for wave and reflow soldering methods 16 data sheet status 17 definitions 18 disclaimers
2003 jun 05 3 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 1 features 1.1 general 30 mbits/s to 1.25 gbits/s bias current up to 100 ma modulation current up to 100 ma rise and fall times typical 120 ps jitter below 30 ps (peak-to-peak value) modulation output voltage up to 2 v dynamic range 1.2 v minimum voltage on the modulation output pin and 0.4 v minimum voltage on pin bias retiming function via external clock with disable option pulse width adjustment function with disable option positive emitter coupled logic (pecl), low voltage positive emitter coupled logic (lvpecl) and current-mode logic (cml) compatible data and clock inputs internal common mode voltage available for ac-coupled data and clock inputs and for single-ended applications 3.3 v supply voltage TZA3047A: ac-coupled laser for 3.3 v laser supply tza3047b: dc-coupled laser for 3.3 v and 5 v laser supply. 1.2 control features dual-loop control for constant and accurate optical average power level and extinction ratio optional average power loop control (up to 1.25 gbits/s) optional direct setting of modulation and bias currents. 1.3 protection features alarm function on operating current alarm function on monitor current enable function on bias and modulation currents soft start on bias and modulation currents. 2 applications sdh/sonet optical transmission systems. 3 general description the tza3047 is a fully integrated laser driver for optical transmission systems with data rates up to 1.25 gbits/s. the tza3047 incorporates all the necessary control and protection functions for a laser driver application with very few external components required and low power dissipation. the dual-loop controls the average monitor current in a programmable range from 150 m a to 1300 m a and the extinction ratio in a programmable range from 5 to 15 (linear scale). the design is made in the philips bicmos rf process and is available in a hbcc32 package or as bare die. the TZA3047A is intended for use in an application with an ac-coupled laser diode with a 3.3 v laser supply voltage. the tza3047b is intended for use in an application with a dc-coupled laser diode for both 3.3 and 5 v laser supply voltages. 4 ordering information type number package name description version TZA3047Avh hbcc32 plastic thermal enhanced bottom chip carrier; 32 terminals; body 5 5 0.65 mm sot560-1 tza3047bvh hbcc32 tza3047uh - bare die; 2 560 2 510 380 m m -
2003 jun 05 4 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 5 block diagram handbook, full pagewidth mdb314 100 w 100 w 20 k w 20 k w 100 w 3 (5) (44, 45) 25 (43) 24 (40, 41) 22 (37, 39) 21 (31, 32) 20 (29, 30) 19 din v cco bias gnd la la laq laq gnd pwa rref maxmon vtemp maxop almon alop 4 (6) d c dinq 20 k w 20 k w 10 k w 100 w 6 (12) v ccd - 1.32 v 5 (11) cin test 2 (3, 4) v ccd 1 (1, 2) v cca 8 gnd (14, 47) gndesd (7, 8, 9, 10, 26) gndrf 9 (15) 10 (16) enable r q alreset 1.4 v 3.3 v enable i mod /1500 disable retiming: v cin, v cinq < 0.3 v i bias /750 i av(mon) /12.5 20 k w 1.4 v 7 (13) cinq control block current conversion avr er modout modin biasout biasin mon i one i mon i mod i bias i zero dual loop: i er = 1.2 v/r er average loop: er = gnd mux ff pulse width adjust alarm operating current pre amp TZA3047A tza3047b post amp v/i 100 ma/v 100 ma/v r q alarm monitor current v and i reference + 23 18 (27) 17 16 (25) 15 (24) 14 (23) 13 (21) 12 (19) 11 (18) 30 (55) 31 (56) gndccb (51, 53) acdc (46) 32 (57) 29 (52) 28 (50) 27 (49) 26 (48) gndo (28, 33, 35, 36, 42) i.c. (20, 22, 34, 38, 54) gndrf (26) gnddft (17) v/i 100 m a 100 m a fig.1 block diagram. the numbers in parenthesis refer to the bare die version.
2003 jun 05 5 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 6 pinning symbol pin pad (1) description gnd die pad substrate common ground plane for v cca ,v ccd ,v cco , rf and i/o; must be connected to ground v cca 1 1 analog supply voltage v cca - 2 analog supply voltage v ccd 2 3 digital supply voltage v ccd - 4 digital supply voltage din 3 5 non-inverted data input (rf input) dinq 4 6 inverted data input (rf input) gndrf - 7 ground gndrf - 8 ground gndrf - 9 ground gndrf - 10 ground test 5 11 test pin or test pad; must be connected to ground cin 6 12 non-inverted clock input (rf input) cinq 7 13 inverted clock input (rf input) gnd 8 - ground gndesd - 14 ground alreset 9 15 alarm reset input; resets almon and alop alarms enable 10 16 enable input for modulation and bias current gnddft - 17 ground alop 11 18 alarm output on operating current (open-drain) almon 12 19 alarm output on monitor diode current (open-drain) i.c. - 20 internally connected maxop 13 21 threshold level input for alarm on operating current i.c. - 22 internally connected vtemp 14 23 temperature dependent voltage output source maxmon 15 24 threshold level input for alarm on monitor diode current rref 16 25 reference current input; must be connected to ground with an accurate (1%) 10 k w resistor gndrf - 26 ground pwa 17 27 pulse width adjustment input gnd 18 - ground gndo - 28 ground laq 19 29 inverted laser modulation output (rf output); output for dummy load laq - 30 inverted laser modulation output (rf output); output for dummy load laq 20 31 inverted laser modulation output (rf output); output for dummy load laq - 32 inverted laser modulation output (rf output); output for dummy load gndo - 33 ground i.c. - 34 internally connected gndo - 35 ground
2003 jun 05 6 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b notes 1. all ground pads must be connected to ground. 2. acdc pad must be left unconnected for ac-coupling applications. for dc-coupling applications, connect this pad to ground. gndo - 36 ground la 21 37 non-inverted laser modulation output (rf output); output for laser i.c. - 38 internally connected la - 39 non-inverted laser modulation output (rf output); output for laser la 22 40 non-inverted laser modulation output (rf output); output for laser la - 41 non-inverted laser modulation output (rf output); output for laser gnd 23 - ground gndo - 42 ground bias 24 43 current source output for the laser bias current v cco 25 44 supply voltage for the output stage and the laser diode v cco - 45 supply voltage for the output stage and the laser diode acdc - 46 ac or dc coupled laser; note 2 gndesd - 47 ground mon 26 48 input for the monitor photo diode (rf input) biasin 27 49 input for the bias current setting biasout 28 50 output of the control block for the bias current gndccb - 51 ground modin 29 52 input for the modulation current setting gndccb - 53 ground i.c. - 54 internally connected modout 30 55 output of the control block for the modulation current er 31 56 input for the optical extinction ratio setting avr 32 57 input for the optical average power level setting symbol pin pad (1) description
2003 jun 05 7 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b handbook, full pagewidth TZA3047A tza3047b mdb318 132 avr er modout modin biasout biasin mon v cco enable alop almon maxop vtemp maxmon rref alreset 31 30 29 28 27 26 25 24 23 22 21 20 19 18 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 bias gnd la la laq laq gnd pwa v cca v ccd din dinq test cin cinq gnd fig.2 pin configuration. 7 functional description 7.1 data and clock input the tza3047 operates with differential positive emitter coupled logic (pecl), low voltage positive emitter coupled logic (lvpecl) and current-mode logic (cml) data and clock inputs with a voltage swing from 100 mv to 1 v (p-p). it is assumed that both the data and clock inputs carry a complementary signal with the specified peak-to-peak value (true differential excitation). the circuit generates an internal common mode voltage for ac-coupled data and clock inputs and for single-ended applications. if v din >v dinq , the modulation current is sunk by the la pins and corresponds to an optical one level of the laser. 7.2 retiming the retiming function synchronizes the data with the clock to improve the jitter performance. the data latch switches on the rising edge of the clock input. the retiming function is disabled when both clock inputs are below 0.3 v. at start-up the initial polarity of the laser is unknown before the first rising edge of the clock input. 7.3 pulse width adjustment the on-duration of the laser current can be adjusted from - 100 to +100 ps. the adjustment time is set by resistor r pwa . the maximum allowable capacitive load on pin pwa is 100 pf. pulse width adjustment is disabled when pin pwa is short-circuited to ground. 7.4 modulator output stage the output stage is a high-speed bipolar differential pair with typical rise and fall times of 120 ps and with a modulation current source of up to 100 ma when the la pins are connected to v cco . the modulation current switches between the la and laq outputs. for a good rf performance the inactive branch carries a small amount of the modulation current. the la output is optimized for the laser allowing a 2 v dynamic range and a 1.2 v minimum voltage. the laq output is optimized for the dummy load. the output stage of the TZA3047A is optimized for ac-coupled lasers and the output stage of the tza3047b is optimized for dc-coupled lasers. the bias output is optimized for low voltage requirements (0.4 v minimum for a 3.3 v laser supply; 0.8 v minimum for a 5 v laser supply).
2003 jun 05 8 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 7.5 dual-loop control the tza3047 incorporates a dual-loop control for a constant, accurate and temperature-independent control of the optical average power level and the extinction ratio. the dual-loop guarantees constant optical one and zero levels which are independent of the laser temperature and the laser age. the dual-loop operates by monitoring the current of the monitor photodiode which is directly proportional to the laser emission. the one and zero current levels of the monitor diode are captured by the detector of the dual-loop control. pin mon for the monitor photodiode current is an rf input. the average monitor current is programmable over a wide current range from 150 to 1300 m a for both the dual-loop control and the average loop control. the extinction ratio is programmable from 5 to 15. the maximum allowable capacitive load on pins avr, er, biasout and modout is 100 pf. 7.6 average loop control the average power control loop maintains a constant average power level of the monitor current over temperature and lifetime of the laser. the average loop control is activated by short-circuiting pin er to ground. 7.7 direct current setting the tza3047 can also operate in open-loop mode with direct setting of the bias and modulation currents. the bias and modulation current sources are transconductance amplifiers and the output currents are determined by the biasin and modin voltages respectively. the bias current source has a bipolar output stage with minimum output capacitance for optimum rf performance. 7.8 soft start at power-up the bias and modulation current sources are released when v cca > 2.7 v and the reference voltage has reached the correct value of 1.2 v. the control loop starts with minimum bias and modulation current at power-up and when the device is enabled. the current levels increase until the mon input current matches the programmed average level and, in the case of dual-loop control, the extinction ratio. 7.9 alarm functions the tza3047 features two alarm functions for the detection of excessive laser operating current and monitor diode current due to laser ageing, laser malfunctioning or a too high laser temperature. the alarm threshold levels are programmed by a resistor or a current source. in the TZA3047A, for the ac-coupled application, the operating current is equal to the bias current. in the tza3047b, for the dc-coupled application, the operating current equals the bias current plus half of the modulation current. 7.10 enable a low level on the enable input disables the bias and modulation current sources: the laser is off. a high level on the enable input or an open enable input switches both current sources on: the laser is operational. 7.11 reference block the reference voltage is derived from a band gap circuit and is available at pin rref. an accurate (1%) 10 k w resistor has to be connected to pin rref to provide the internal reference current. the maximum capacitive load on pin rref is 100 pf. the reference voltage on the setting pins (maxop, maxmon, pwa, er and avr) is buffered and derived from the band gap voltage. the output voltage on pin vtemp reflects the junction temperature of the tza3047, the temperature coefficient of v vtemp equals - 2.2 mv/k.
2003 jun 05 9 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 8 limiting values in accordance with the absolute maximum rating system (iec 60134); all voltages are referenced to ground; positive currents ?ow into the ic. 9 thermal characteristics in compliance with jedec standards jesd51-5 and jesd51-7. symbol parameter condition min. max. unit v ccd digital supply voltage - 0.5 +3.5 v v cca analog supply voltage - 0.5 +3.5 v v cco output stage supply voltage 3.3 v laser supply - 0.5 +3.5 v 5 v laser supply (tza3047b only) - 0.5 +5.3 v v o(la) output voltage at pin la TZA3047A; v cco = 3.3 v 1.2 4.5 v tza3047b; v cco = 3.3 v 0.8 4.1 v tza3047b; v cco = 5 v 1.2 4.5 v v o(laq) output voltage at pin laq TZA3047A; v cco = 3.3 v 1.8 4.5 v tza3047b; v cco = 3.3 v 1.6 4.5 v tza3047b; v cco = 5 v 2.0 5.2 v v bias bias voltage TZA3047A; v cco = 3.3 v 0.4 3.6 v tza3047b; v cco = 3.3 v 0.4 3.6 v tza3047b; v cco = 5 v 0.8 4.1 v v n voltage on other input and output pins analog inputs and outputs - 0.5 v cca + 0.5 v digital inputs and outputs - 0.5 v ccd + 0.5 v i n input current on pins maxop, maxmon, rref, pwa, er and avr - 1.0 0 ma vtemp, biasout and modout - 1.0 +1.0 ma alop, almon and mon 0 5.0 ma t amb ambient temperature - 40 +85 c t j junction temperature - 40 +125 c t stg storage temperature - 65 +150 c symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient 4 layer printed circuit board in still air with 9 plated vias connected with the heatsink and the ?rst ground plane in the pcb 35 k/w hbcc32 die pad soldered to pcb 60 k/w
2003 jun 05 10 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 10 dc characteristics t amb = - 40 to +85 c; r th(j-a) = 35 k/w; p tot = 400 mw; v cca = 3.14 to 3.47 v; v ccd = 3.14 to 3.47 v; v cco = 3.14 to 3.47 v; r avr = 7.5 k w ;r er =62k w ;r modin = 6.2 k w ;r biasin = 6.8 k w ;r pwa =10k w ;r rref =10k w ; r maxmon =13k w ; r maxop =20k w ; positive currents ?ow into the ic; all voltages are referenced to ground; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit supplies: pins v cca ,v ccd and v cco v cca analog supply voltage 3.14 3.3 3.47 v v ccd digital supply voltage 3.14 3.3 3.47 v v cco rf output supply voltage 3.3 v laser supply 3.14 3.3 3.47 v 5 v laser supply 4.75 5.0 5.25 v i cca analog supply current 30 40 50 ma i ccd digital supply current 35 45 55 ma i cco rf output supply current pins la and laq open-circuit 3.3 v laser supply 8 15 25 ma 5 v laser supply - 20 - ma p core core power dissipation core excluding output currents i o(la) ,i o(laq) and i bias ; pwa and retiming off - 264 - mw p tot total power dissipation v bias = 3.3 v; i bias = 20 ma; i mod = 16 ma; note 1 330 400 500 mw data and clock inputs: pins din and cin v i(p-p) input voltage swing (peak-to-peak value) v i(din) =(v ccd - 2v)tov ccd; v i(cin) =(v ccd - 2v)tov ccd 100 - 1000 mv v int(cm) internal common mode voltage ac-coupled inputs - v ccd - 1.32 - v v io input offset voltage note 2 - 10 0 +10 mv z i(dif) differential input impedance 80 100 125 w z i(cm) common mode input impedance 810 13k w v i(cin)(dis) input voltage for disabled retiming v cin =v cinq -- 0.3 v monitor photodiode input: pin mon v i(mon) input voltage i mon =50to2500 m a 0.9 1.1 1.3 v z i(mon) input impedance i mon = 50 to 2500 m a - 27 -w extinction ratio setting for dual-loop control: pins mon and er er min low extinction ratio setting dual-loop set-up; i er > - 30 m a; note 3 linear scale - 57 - db scale - 7 8.5 db
2003 jun 05 11 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b er max high extinction ratio setting dual-loop set-up; i er < - 10 m a; note 3 linear scale 13 15 -- db scale 11 11.8 - db er acc relative accuracy of er temperature and v cca variations; er = 10; avr = 550 m a - 10 - +10 % v ref(er) reference voltage on pin er i er = - 35 to - 5 m a; c er < 100 pf 1.15 1.20 1.25 v i er current sink on pin er - 35 -- 5 m a average setting for dual-loop control and average loop control: pins mon and avr i av(mon)(low) low average monitor current setting i avr > - 280 m a dual-loop (er = 5) -- 150 m a average loop (pin er to gnd) -- 150 m a i av(mon)(max) maximum average monitor current setting i avr = - 15.0 m a dual-loop (er = 5) 1200 1300 -m a average loop (pin er to gnd) 1200 1300 -m a d i av(mon) relative accuracy of average current on pin mon temperature and v cca variations; er = 10; avr = 550 m a - 10 - +10 % v ref(avr) reference voltage on pin avr i avr = - 250 to - 15 m a; c avr < 100 pf 1.15 1.20 1.25 v i sink(avr) current sink on pin avr - 280 -- 15 m a control loop modulation output: pin modout i source(modout) source current v modout = 0.5 to 1.5 v; c modout < 100 pf -- - 200 m a i sink(modout) sink current v modout = 0.5 to 1.5 v; c modout < 100 pf 200 --m a control loop bias output: pin biasout i source(biasout) source current v biasout = 0.5 to 1.5 v; c biasout < 100 pf -- - 200 m a i sink(biasout) sink current v biasout = 0.5 to 1.5 v; c biasout < 100 pf 200 --m a bias current source: pins biasin and bias g m(bias) bias transconductance v biasin = 0.5 to 1.5 v v bias =v cco = 3.3 v 90 110 125 ma/v v bias = 4.1 v; v cco = 5.0 v 95 110 130 ma/v i source(biasin) source current at pin biasin v biasin = 0.5 to 1.5 v - 110 - 100 - 95 m a i bias(max) maximum bias current v biasin = 1.8 v 100 -- ma i bias(min) minimum bias current v biasin = 0 to 0.4 v - 0.2 0.4 ma i bias(dis) bias current at disable v enable < 0.8 v -- 30 m a symbol parameter conditions min. typ. max. unit
2003 jun 05 12 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b v bias output voltage on pin bias normal operation v cco = 3.3 v 0.4 - 3.6 v v cco = 5 v 0.8 - 4.1 v modulation current source: pin modin g m(mod) modulation transconductance v modin = 0.5 to 1.5 v v la =v laq =v cco = 3.3 v 78 90 105 ma/v v la =v laq =v cco = 4.5 v 80 95 110 ma/v i source(modin) source current at pin modin v modin = 0.5 to 1.5 v - 110 - 100 - 95 m a modulation current outputs: pins la i o(la)(max)(on) maximum laser modulation output current at la on v modin = 1.8 v; v la =v cco = 3.3 v; note 4 100 -- ma i o(la)(min)(on) minimum laser modulation output current at la on v modin =0to0.4v; v la =v cco = 3.3 v; note 4 - 56ma i o(la)(min)(off) minimum laser modulation output current at la off v la =v cco = 3.3 v; note 4 v modin = 0.5 v -- 0.8 ma v modin = 1.5 v -- 2ma z o(la) , z o(laq) output impedance pins la and laq 80 100 125 w i o(la)(dis) , i o(laq)(dis) non-inverted and inverted laser modulation output current at disable v enable < 0.8 v -- 200 m a v o(la)min minimum output voltage at pin la TZA3047A; v cco = 3.3 v 1.6 -- v tza3047b; v cco = 3.3 v 1.2 -- v tza3047b; v cco = 5 v 1.6 -- v enable function: pin enable v il low-level input voltage bias and modulation currents disabled -- 0.8 v v ih high-level input voltage bias and modulation currents enabled 2.0 -- v r pu(int) internal pull-up resistance 16 20 30 k w alarm reset: pin alreset v il low-level input voltage no reset -- 0.8 v v ih high-level input voltage reset 2.0 -- v r pd(int) internal pull-down resistance 710 15k w symbol parameter conditions min. typ. max. unit
2003 jun 05 13 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b notes 1. the total power dissipation p tot is calculated with v bias =v cco = 3.3 v and i bias = 20 ma. in the application v bias will be v cco minus the laser diode voltage which results in a lower total power dissipation. 2. the specification of the offset voltage is guaranteed by design. 3. any (avr, er) setting needs to respect 50 m a 2003 jun 05 14 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 11 ac characteristics t amb = - 40 to +85 c; r th(j-a) = 35 k/w; p tot = 400 mw; v cca = 3.14 to 3.47 v; v ccd = 3.14 to 3.47 v; v cco = 3.14 to 3.47 v; r avr = 7.5 k w ;r er =62k w ;r modin = 6.2 k w ;r biasin = 6.8 k w ;r pwa =10k w ;r rref =10k w ; r maxmon =13k w ; r maxop =20k w ; positive currents ?ow into the ic; all voltages are referenced to ground; unless otherwise speci?ed. notes 1. the output jitter specification is guaranteed by design. 2. for high modulation current, t r and t f are impacted by total inductance between the la pins and the laser connection. symbol parameter conditions min. typ. max. unit rf path br bit rate 0.03 - 1.25 gbits/s j la(p-p) jitter of pin la output signal (peak-to-peak value) r l =25 w ; note 1 -- 30 ps t r rise time of voltage on pin la 20% to 80%; r l =25 w ; note 2 - 120 150 ps t f fall time of voltage on pin la 80% to 20%; r l =25 w ; note 2 - 120 150 ps t su(d) data input set-up time 60 -- ps t h(d) data input hold time 60 -- ps t en(start) start-up time at enable direct current setting -- 1 m s current control tc int internal time constant dual-loop control operating currents fully settled 30 -- ms pulse width adjustment t pwa(min) minimum pulse width adjustment on pins la r pwa = 6.7 k w ; c pwa < 100 pf -- 100 - ps t pwa pulse width adjustment on pins la r pwa =10k w ; c pwa < 100 pf - 0 - ps t pwa(max) maximum pulse width adjustment on pins la r pwa =20k w ; c pwa < 100 pf - 100 - ps
2003 jun 05 15 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 12 application information 12.1 design equations 12.1.1 b ias and modulation currents the bias and modulation currents are determined by the voltages on pins biasin and modin. these voltages are applied by the biasout and modout pins for dual-loop control. for average loop control the biasin voltage is applied by the biasout pin and the modin voltage is applied by an external voltage source or an external resistor r modin . for direct setting of bias and the modulation current, the biasin and modin voltages have to be applied by external voltage sources or by r biasin and r modin external resistors connected on biasin and modin pins: i bias =(r biasin 100 m a - 0.5 v) g m(bias) [ma] i mod =(r modin 100 m a - 0.5 v) g m(mod) + 5 [ma] the bias and modulation current sources operate with an input voltage range from 0.5 to 1.5 v. the output current is at its minimum level for an input voltage below 0.4 v; see figs 3 and 4. the bias and modulation current sources are temperature compensated and the adjusted current level remains stable over the temperature range. the bias and modulation currents increase with increasing resistor values for r biasin and r modin respectively, this allows resistor tuning to start at a minimum current level. 12.1.2 a verage monitor current and extinction ratio the average monitor current i av(mon) in dual-loop or average loop operation is determined by the source current (i avr ) of the avr pin. the current can be sunk by an external current source or by an external resistor (r avr ) connected to ground: i av(mon) = 1580 - 5.26 i avr =1580 - 5.26 [m a] the extinction ratio in dual-loop operation is determined by the source current (i er ) of the er pin. the current can be sunk by an external current source or by an external resistor (r er ) connected to ground: the average monitor current and the extinction ratio as a function of the i avr and i er current are illustrated in fig.5. the average monitor current increases with a decreasing i avr or increasing r avr , this allows resistor tuning of r avr to start at minimum i avr current level. the formulas used to program avr and er are valid for typical conditions; tuning is necessary to achieve good absolute accuracy of avr and er values. handbook, halfpage mgt890 v biasin (v) i bias (ma) i bias(min) g m(bias) = 110 ma/v 0 110 0.2 0.5 1.5 fig.3 bias current as a function of biasin voltage. handbook, halfpage mgt891 v modin (v) i mod = i o(la) (ma) i o(la)(min) g m(mod) = 100 ma/v 0 105 5 0.5 1.5 fig.4 modulation current as a function of modin voltage. la current when la output is on. v o(la) =v cco . v avr r avr -------------- er 20 i er 2 m a --------------- C 20 1 2 m a ------------ - v er r er ---------- C ==
2003 jun 05 16 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b handbook, full pagewidth mgt892 i avr ( m a) i er ( m a) i av(mon) ( m a) i av(mon) = 1580 - 5.26 i avr m a 1500 er er = 20 - i er 2 m a 30 0 295 30 15 15 5 10 fig.5 average monitor current and extinction ratio as a function of i avr and i er . 12.1.3 d ual - loop control the dual-loop control measures the monitor current (i mon ) corresponding with an optical one level and the i mon corresponding with the optical zero level. the measured i mon(one) and i mon(zero) are compared with the average monitor current setting and the extinction ratio setting according to: the dual-loop controls the bias and the modulation current for obtaining the i mon(one) and i mon(zero) current levels which correspond with the programmed avr and er settings. performance of the dual-loop for high data-rate is linked to the quality of the incoming imon signal: a high performance interconnection between monitor photodiode and mon input is requested for maximum data rate applications (1.25 gbits/s). the operational area of the dual-loop and the control area of the monitor input current must respect the following equations: stability of er and avr settings are guaranteed over a range of temperature and supply voltage variations. i av(mon) i mon(one) i mon(zero) + 2 ---------------------------------------------------- - = er i mon(one) i mon(zero) ----------------------- - = 50 m ai mon(zero) 500 m a << 250 m ai mon(one) 2500 m a <<
2003 jun 05 17 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 12.1.4 a larm operating current the alarm threshold i oper(alarm) on the operating current is determined by the source current i maxop of the maxop pin. the current range for i maxop is from 10 to 200 m a which corresponds with an i oper(alarm) from 7.5 to 150 ma. the i maxop current can be sunk by an external current source or by connecting r maxop to ground: the operating current equals the bias current for an ac-coupled laser application and equals the bias current plus half of the modulation current for the dc-coupled laser application: 12.1.5 a larm monitor current the alarm threshold i mon(alarm) on the monitor current is determined by the source current i maxmon of the maxmon pin. the current range for i maxmon is from 10 to 200 m a which corresponds with an i mon(alarm) from 150 to 3000 m a. the i maxmon current can be sunk by an external current source or by connecting r maxmon to ground: 12.1.6 p ulse width adjustment the pulse width adjustment time is determined by the value of resistor r pwa , as shown below. [ps] the t pwa range is from - 100 to +100 ps which corresponds with a r pwa range between a minimum resistance of 6.7 k w and a maximum resistance of 20 k w . the pwa function is disabled when the pwa input is short-circuited to ground; t pwa equals 0 ps for a disabled pwa function. i oper (alarm) n maxop v maxop r maxop -------------------- = i oper tza 3047a () i bias = i oper tza 3047b () i bias i mod 2 ---------- + = i mon(alarm) n maxmon v maxmon r maxmon ------------------------ = t pwa 200 r pwa 10 k w C r pwa ------------------------------------ - = mgt893 handbook, halfpage r pwa (k w ) t pwa (ps) 100 0 - 100 20 10 6.7 fig.6 pulse width adjustment.
2003 jun 05 18 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 12.2 TZA3047A with dual-loop control a simplified application using the TZA3047A with dual-loop control and with an ac-coupled laser at 3.3 v laser voltage is illustrated in fig.7. the average power level and the extinction ratio are determined by the resistors r avr and r er . the modout and biasout outputs are connected to the modin and the biasin inputs respectively. the alarm threshold on the operating current is made temperature dependent with resistor r vtemp connected between vtemp and maxop. this alarm detects the end of life of the laser. the resistor r pwa enables pulse width adjustment for optimizing the eye diagram. i oper(alarm) n maxop v maxop r maxop -------------------- tc vtemp t j 25 c C () r vtemp --------------------------------------------------------------- C ? ?? = handbook, full pagewidth mdb317 TZA3047A 132 avr er modout modin biasout biasin mon v cco enable alop almon maxop vtemp maxmon rref pwa 31 30 29 28 27 26 25 24 23 22 21 20 19 18 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 bias laser with monitor diode gnd la la laq laq gnd v cca v ccd din 3.3 v 3.3 v 3.3 v dinq test cin cinq gnd alreset fig.7 TZA3047A with ac-coupled laser and dual-loop control.
2003 jun 05 19 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 12.3 tza3047b with dual-loop control a simplified application using the tza3047b with dual-loop control and with a dc-coupled laser at 3.3 v or 5 v laser voltage is illustrated in fig.8. the average power level and the extinction ratio are determined by the resistors r avr and r er . the modout and biasout outputs are connected to the modin and the biasin inputs respectively. the open-drain outputs alop and almon are short-circuited with pin enable causing an active alarm to disable the bias and modulation current sources. the alreset input will reset the alarm latches and enable normal operation. handbook, full pagewidth mdb316 tza3047b 132 avr er modout modin biasout biasin mon v cco enable alop almon maxop vtemp maxmon rref pwa 31 30 29 28 27 26 25 24 23 22 21 20 19 18 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 bias laser with monitor diode gnd la la laq laq gnd v cca v ccd din 3.3 v 3.3 v or 5 v 3.3 v dinq test cin cinq gnd alreset fig.8 tza3047b with dc-coupled laser and dual-loop control.
2003 jun 05 20 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 12.4 tza3047b with average loop control a simplified application using the tza3047b with average loop control and a dc-coupled laser at 3.3 or 5 v laser voltage is illustrated in fig.9. the er pin is short-circuited to ground for the average loop control. the average power level is determined by the resistor r avr . the average loop controls the bias current and the biasout output is connected to the biasin input. the modulation current is determined by the modin input voltage which is generated by the resistor r modin and the 100 m a source current of the modin pin. handbook, full pagewidth mdb315 tza3047b 132 avr er modout modin biasout biasin mon v cco enable alop almon maxop vtemp maxmon rref pwa 31 30 29 28 27 26 25 24 23 22 21 20 19 18 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 bias laser with monitor diode gnd la la laq laq gnd v cca v ccd din 3.3 v 3.3 v or 5 v 3.3 v dinq test cin cinq gnd alreset fig.9 tza3047b with dc-coupled laser and average loop control.
2003 jun 05 21 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 13 bonding pad locations notes 1. all coordinates are referenced (in m m) to the centre of the die. 2. all gnd connections should be used. 3. recommended order of bonding: all gnd first, then v cca , v ccd and v cco supplies and finally the input and output pins. 4. pad is internally connected, do not use. symbol pad (2)(3) coordinates (1) xy v cca 1 - 1123.9 +1029.3 v cca 2 - 1123.9 +949.3 v ccd 3 - 1123.9 +844.3 v ccd 4 - 1123.9 +764.3 din 5 - 1124.0 +604.3 dinq 6 - 1124.9 +393.3 gndrf 7 - 1123.9 +244.5 gndrf 8 - 1123.9 +139.4 gndrf 9 - 1123.9 +4.7 gndrf 10 - 1123.9 - 100.3 test 11 - 1123.4 - 253.4 cin 12 - 1123.9 - 441.2 cinq 13 - 1123.9 - 697.1 gndesd 14 - 1123.9 - 850.8 alreset 15 - 1123.9 - 991.4 enable 16 - 829.8 - 1123.7 gnddft 17 - 665.6 - 1124.0 alop 18 - 504.9 - 1124 almon 19 - 267.6 - 1124.3 i.c. 20 (4) - 221.5 - 344.4 maxop 21 - 98.5 - 1124.3 i.c. 22 (4) - 48.6 - 368.4 vtemp 23 +294.0 - 1124.2 maxmon 24 +466.9 - 1124.2 rref 25 +694.9 - 1124.0 gndrf 26 +860.3 - 1124.0 pwa 27 +1098.9 - 979.4 gndo 28 +1099.0 - 829.7 laq 29 +1099.0 - 691.2 laq 30 +1099.0 - 611.2 laq 31 +1099.0 - 506.4 laq 32 +1099.0 - 426.4 gndo 33 +1099.8 - 247.0 i.c. 34 (4) +839.0 - 194.4 gndo 35 +1099.8 - 142.0 gndo 36 +1099.8 - 36.8 la 37 1099.1 105.4 i.c. 38 (4) 839.0 179.6 la 39 1099.1 185.4 la 40 1099.1 290.5 la 41 1099.1 370.5 gndo 42 1099.1 670.8 bias 43 1099.0 804.8 v cco 44 1099.0 944.4 v cco 45 1099.0 1024.4 acdc 46 942.5 1124.3 gndesd 47 765.0 1123.8 mon 48 602.1 1123.7 biasin 49 431.7 1123.8 biasout 50 267.6 1123.8 gndccb 51 100.8 1123.8 modin 52 - 82.7 +1123.8 gndccb 53 - 241.1 +1123.8 i.c. 54 (4) - 274.4 +954.4 modout 55 - 487.2 +1123.8 er 56 - 645.6 +1123.8 avr 57 - 802.8 +1123.8 symbol pad (2)(3) coordinates (1) xy
2003 jun 05 22 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b table 1 physical characteristics of the bare die parameter value glass passivation 0.3 m m psg (phosphosilicate glass) on top of 0.8 m m of silicon nitride bonding pad dimension minimum dimension of exposed metallization is 80 80 m m (pad size = 90 90 m m) metallization 2.8 m m alcu thickness 380 m m nominal size 2.560 2.510 mm (6.43 mm 2 ) backing silicon; electrically connected to gnd potential through substrate contacts attach temperature <440 c; recommended die attachment is by gluing attach time <15 s 57 56 55 53 51 50 49 48 47 46 45 44 43 42 41 40 39 37 38 54 handbook, full pagewidth mdb319 tza3047uh x y 0 0 2.56 mm 2.51 mm 52 36 35 33 32 31 30 29 28 27 v cco v cco bias gndo la la la la i.c. i.c. i.c. i.c. i.c. gndo gndo gndo laq laq laq laq gndo pwa 26 25 24 23 21 22 19 18 20 17 16 enable avr er modout gndccb modin gndccb biasout biasin mon gndesd acdc gnddft alop almon maxop vtemp maxmon rref gndrf 15 14 13 12 10 11 9 8 7 6 5 4 3 2 1 alreset gndesd cinq cin gndrf test gndrf gndrf gndrf dinq din v ccd v ccd v cca v cca 34 fig.10 tza3047uh die.
2003 jun 05 23 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 14 package outline 4.2 a 1 b a 2 unit d e 1 e 1 references outline version european projection issue date 00-02-01 03-03-12 iec jedec jeita mm 0.8 0.10 0.05 0.7 0.6 5.1 4.9 3.2 3.0 5.1 4.9 3.2 3.0 0.35 0.20 dimensions (mm are the original dimensions) sot560-1 mo-217 d 1 0.5 0.3 b 1 0.50 0.35 b 2 0.50 0.35 b 3 4.15 e 3 e 0.5 w e xy 0.15 0.15 0.05 4.2 e 2 4.15 e 4 0.2 v 0 2.5 5 mm scale sot560-1 hbcc32: plastic thermal enhanced bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm a max. detail x y va e e 1 e 3 d 1 e 2 x d e a b c 32 1 e 4 e 1 a 1 a 2 a x c x b b b 3 b 1 ball a1 index area b 2 a c c b v m w m a c c b v m w m a c c b v m w m a c c b v m w m
2003 jun 05 24 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 15 soldering 15.1 introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering can still be used for certain surface mount ics, but it is not suitable for fine pitch smds. in these situations reflow soldering is recommended. 15.2 re?ow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferably be kept: below 220 c for all the bga packages and packages with a thickness 3 2.5mm and packages with a thickness <2.5 mm and a volume 3 350 mm 3 so called thick/large packages below 235 c for packages with a thickness <2.5 mm and a volume <350 mm 3 so called small/thin packages. 15.3 wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. 15.4 manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
2003 jun 05 25 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 15.5 suitability of surface mount ic packages for wave and re?ow soldering methods notes 1. for more detailed information on the bga packages refer to the (lf)bga application note (an01026); order a copy from your philips semiconductors sales office. 2. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 3. these packages are not suitable for wave soldering. on versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. on versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 4. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 5. wave soldering is suitable for lqfp, tqfp and qfp packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. wave soldering is suitable for ssop, tssop, vso and vssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. package (1) soldering method wave reflow (2) bga, lbga, lfbga, sqfp, tfbga, vfbga not suitable suitable dhvqfn, hbcc, hbga, hlqfp, hsqfp, hsop, htqfp, htssop, hvqfn, hvson, sms not suitable (3) suitable plcc (4) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (4)(5) suitable ssop, tssop, vso, vssop not recommended (6) suitable
2003 jun 05 26 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b 16 data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). 17 definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 18 disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 jun 05 27 philips semiconductors product speci?cation 30 mbits/s up to 1.25 gbits/s laser drivers TZA3047A; tza3047b bare die ? all die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of philips' delivery. if there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. there are no post packing tests performed on individual die or wafer. philips semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. accordingly, philips semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. it is the responsibility of the customer to test and qualify their application in which the die is used.
? koninklijke philips electronics n.v. 2003 sca75 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands 403510/01/pp 28 date of release: 2003 jun 05 document order number: 9397 750 11277

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